Determining the Dielectric Characteristics of the Au/C20H12/n-Si (MPS) Structure Over A Wide Temperature and Voltage

Abstract

The temperature and voltage effects on dielectric properties (epsilon ' and epsilon ''), electric modulus (M' and M''), and ac electrical conductivity (sigma(ac)) of the fabricated Au/C20H12/n-Si (MPS) structures have been investigated in wide temperature range of 200-400 K and voltage (+/- 3 V) using C/G-V measurements at 500 kHz. The voltage and temperature dependence profile of phase-angle (theta degrees) were also extracted from the impedance (Z ' and Z ''). All these parameters were found as a function of temperature and voltage in the forward bias region due to the relaxation mechanisms and interface traps located at C20H12/n-Si interface in the bandgap of Si. The characterizations show that main dielectric parameters such as dielectric constant (epsilon'), dielectric loss (epsilon''), tangent loss (tan delta), and ac electrical conductivity (sigma(ac)) increase with increasing temperature, epsilon'-V and M''-V plots show a peak, and its magnitude and position vary with temperature due to reordering/restructure of traps and polarization under temperature and voltage effects. The E-a value was obtained from the slope of Arrhenius, Ln(sigma(ac))-q/kT), plot as 40.8 meV.