Meslek Yüksek Okulları / Vocational Schools

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Author: search.filters.author.Cetinkaya, H. G.search.filters.applied.f.language: search.filters.language.en_US

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    Investigation Of The Frequency Effect On Electrical Modulus And Dielectric Properties Of Al/P-Si Structure With %0.5 Bi:Zno Interfacial Layer
    (Başkent Üniversitesi Teknik Bilimler Meslek Yüksekokulu, 2024-05-01) Bengi, S.; Cetinkaya, H. G.; Altindal, S.; Durmus, P.
    Capacitance and conductance measurements were made to evaluate the effects of voltage and frequency on the dielectric properties, ac electrical conductivity (sigma(ac)), and electric-modulus of the Al/%0.5 Bi:ZnO/p-Si structures. The measurements were taken in a voltage range of (- 4 V)-(+ 4 V) and frequency range of 0.1-1 MHz, respectively. All parameters were discovered to have substantial relationships to voltage and frequency at accumulation and depletion regions due to relaxation mechanisms and interface traps positioned between %0.5 Bi:ZnO interlayer and p-Si with energies in the Si bandgap. The e'-V, M''-V, and Z''-V plots all demonstrate a peak, and because of electronic charges being reordering and restructuring at surfaces, traps, and dipole-polarization under the external electric field, the peak's position and magnitude vary with frequency. The double logarithmic sigma ac-w curve shows linear behaviour, its slope was found as 0.699, and this value of the Al/%0.5 Bi:ZnO/p-Si/Au structure has high ac conductivity or low resistivity. The observed high changes in the dielectric constant and dielectric loss (e', e'') were explained by Maxwell-Wagner type polarization as well as interface traps.
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    The Frequency Dependent of Main Electrical Parameters, Conductivity and Surface States in the Al/ (%0.5 Bi:ZnO)/p-Si/Au (MIS) Structures
    (Başkent Üniversitesi Teknik Bilimler Meslek Yüksek Okulu, 2024-03-09) Cetinkaya, H. G.; Bengi, S.; Durmus, P.; Demirezen, S.; Altindal, S.
    The capacitance/conductance-voltage-frequency (C/G-V-f) features of the Au/p-Si structures with (%0.5 Bi-doped ZnO) interlayer grown by spin-coating technique was investigated between 100 kHz and 1 MHz. The C-2-V curves that depend on frequency were used to determine the electrical-parameters like diffusion-potential (V-D), Fermi-energy level (E-F), barrier-height (Phi(B)), and depletion-layer (W-D) thickness. The value of Phi(B) was found to increase with increasing frequency due to the decrease in surface-states (N-ss) effects on the C-V characteristics. Voltage dependent series-resistance (R-s) was obtained by using Nicollian-Brews method for each frequency and it decreased with increasing frequency. Both the low-high frequency capacitance (C-LF-C-HF) and Hill-Coleman techniques were used to determine the voltage-dependent profile of N-ss. While N-ss decreases with increasing frequency, voltage-dependent on them give two distinctive peaks due to a special distribution of them at interlayer/semiconductor interface in the bandgap depending on their relaxation time. All these experimental results indicate that the existence of R-s, N-ss, and interlayers considerably influence the impedance measurements.