Teknik Bilimler Meslek Yüksekokulu / Vocational School of Technical Sciences

Permanent URI for this collectionhttps://hdl.handle.net/11727/2031

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    Investigation Of The Frequency Effect On Electrical Modulus And Dielectric Properties Of Al/P-Si Structure With %0.5 Bi:Zno Interfacial Layer
    (Başkent Üniversitesi Teknik Bilimler Meslek Yüksekokulu, 2024-05-01) Bengi, S.; Cetinkaya, H. G.; Altindal, S.; Durmus, P.
    Capacitance and conductance measurements were made to evaluate the effects of voltage and frequency on the dielectric properties, ac electrical conductivity (sigma(ac)), and electric-modulus of the Al/%0.5 Bi:ZnO/p-Si structures. The measurements were taken in a voltage range of (- 4 V)-(+ 4 V) and frequency range of 0.1-1 MHz, respectively. All parameters were discovered to have substantial relationships to voltage and frequency at accumulation and depletion regions due to relaxation mechanisms and interface traps positioned between %0.5 Bi:ZnO interlayer and p-Si with energies in the Si bandgap. The e'-V, M''-V, and Z''-V plots all demonstrate a peak, and because of electronic charges being reordering and restructuring at surfaces, traps, and dipole-polarization under the external electric field, the peak's position and magnitude vary with frequency. The double logarithmic sigma ac-w curve shows linear behaviour, its slope was found as 0.699, and this value of the Al/%0.5 Bi:ZnO/p-Si/Au structure has high ac conductivity or low resistivity. The observed high changes in the dielectric constant and dielectric loss (e', e'') were explained by Maxwell-Wagner type polarization as well as interface traps.
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    Esra (Elevator Simulation, Research & Analysis): An Open-Source Software Tool For Elevator Traffic Simulation, Research, And Analysis
    (Başkent Üniversitesi Teknik Bilimler Meslek Yüksekokulu, 2024-04-05) Tartan, Emre Oner; Ciflikli, Cebrail
    Today, although elevator companies typically have their own elevator simulation and analysis tools, these remain inaccessible to the public due to commercial concerns and rivalry in the sector. Consequently, due to the lack of modular open-source software tools, interest in the design and development of elevator systems in academia is quite limited, contrary to the vast potential of the field. This paper addresses this gap introducing an open-source software tool, the Elevator Simulator for Research and Analysis (ESRA), developed using the MATLAB programming language and an object-oriented approach. ESRA features built-in control methods, and visualization options with the capability to save and reuse traffic data, facilitating in-depth comparative analysis. Moreover, its modular architecture allows a design and development basis for further research in the field. The proposed software aims to enable developers to design, implement, analyse, and compare their control algorithms with other methods.
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    The Frequency Dependent of Main Electrical Parameters, Conductivity and Surface States in the Al/ (%0.5 Bi:ZnO)/p-Si/Au (MIS) Structures
    (Başkent Üniversitesi Teknik Bilimler Meslek Yüksek Okulu, 2024-03-09) Cetinkaya, H. G.; Bengi, S.; Durmus, P.; Demirezen, S.; Altindal, S.
    The capacitance/conductance-voltage-frequency (C/G-V-f) features of the Au/p-Si structures with (%0.5 Bi-doped ZnO) interlayer grown by spin-coating technique was investigated between 100 kHz and 1 MHz. The C-2-V curves that depend on frequency were used to determine the electrical-parameters like diffusion-potential (V-D), Fermi-energy level (E-F), barrier-height (Phi(B)), and depletion-layer (W-D) thickness. The value of Phi(B) was found to increase with increasing frequency due to the decrease in surface-states (N-ss) effects on the C-V characteristics. Voltage dependent series-resistance (R-s) was obtained by using Nicollian-Brews method for each frequency and it decreased with increasing frequency. Both the low-high frequency capacitance (C-LF-C-HF) and Hill-Coleman techniques were used to determine the voltage-dependent profile of N-ss. While N-ss decreases with increasing frequency, voltage-dependent on them give two distinctive peaks due to a special distribution of them at interlayer/semiconductor interface in the bandgap depending on their relaxation time. All these experimental results indicate that the existence of R-s, N-ss, and interlayers considerably influence the impedance measurements.