Ozcelik, S.Akcay, N.Tivanov, M.2020-12-262020-12-2620190219-581Xhttp://hdl.handle.net/11727/5210MoS2 films on sapphire and SiO2/Si substrates were fabricated by sulfurization of sputtered Mo precursor films at 900 degrees C in a two-zone furnace. Structural, morphological, optical and electrical properties of the films were determined. The films of MoS2 were successfully grown on the substrates with polycrystalline structures and proposed to be used in electro-optical devices.enginfo:eu-repo/semantics/closedAccessMoS2 filmsmolybdenum disulfidetransition metal dichalcogenidesCVDArticle183-40004727752000382-s2.0-85068105849