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dc.contributor.authorOzcelik, S.
dc.contributor.authorAkcay, N.
dc.contributor.authorTivanov, M.
dc.date.accessioned2020-12-26T08:48:58Z
dc.date.available2020-12-26T08:48:58Z
dc.date.issued2019
dc.identifier.issn0219-581Xen_US
dc.identifier.urihttp://hdl.handle.net/11727/5210
dc.description.abstractMoS2 films on sapphire and SiO2/Si substrates were fabricated by sulfurization of sputtered Mo precursor films at 900 degrees C in a two-zone furnace. Structural, morphological, optical and electrical properties of the films were determined. The films of MoS2 were successfully grown on the substrates with polycrystalline structures and proposed to be used in electro-optical devices.en_US
dc.language.isoengen_US
dc.relation.isversionof10.1142/S0219581X19400374en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMoS2 filmsen_US
dc.subjectmolybdenum disulfideen_US
dc.subjecttransition metal dichalcogenidesen_US
dc.subjectCVDen_US
dc.titleFabrication and Properties of Molybdenum Disulfide Films for Electro-Optical Applicationsen_US
dc.typearticleen_US
dc.relation.journalINTERNATIONAL JOURNAL OF NANOSCIENCEen_US
dc.identifier.volume18en_US
dc.identifier.issue3-4en_US
dc.identifier.wos000472775200038en_US
dc.identifier.scopus2-s2.0-85068105849en_US
dc.contributor.orcID0000-0002-3948-5629en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergien_US
dc.contributor.researcherIDABB-7017-2020en_US


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